Field emitter having sharp tip

Semiconductor device manufacturing: process – Electron emitter manufacture

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257 10, 445 24, 445 50, 313306, 313309, 313310, H01L 2100

Patent

active

060965703

ABSTRACT:
A method of manufacturing a field emission element includes the steps of: forming a surface insulating layer including a conductive gate film on a substrate; forming a hole in the surface insulating layer by partially removing the surface insulating layer; forming a side spacer on an inner wall of the hole and forming a gate hole in the conductive gate film, the side spacer serving as a first sacrificial film; forming a second sacrificial film on surfaces of the surface insulating layer and the side space and on a bottom surface of the gate hole, to a thickness so as to form a flat upper surface area of the second sacrificial film above the gate hole; forming a conductive first emitter film on a whole surface of the second sacrificial film; forming a conductive second emitter film by disposing a conductive ultra-fine particle group on the first emitter film and baking the ultra-fine particle group; and exposing a tip portion of the second emitter film on a side of the flat upper surface area of the first emitter film, by etching and removing an unnecessary portion including a portion of the first emitter film near the flat upper surface area. A degree of freedom of controlling the height of an emitter tip can be broadened.

REFERENCES:
patent: 5599749 (1997-02-01), Hattori
patent: 5795208 (1998-08-01), Hattori
patent: 5981305 (1999-11-01), Hattori
Field Emitters with .beta.-W, Abstract of the spring meeting of the Japanese Applied Physics, No. 2 30p-T-3, 1995.*
"Dry type direct drawing system using super fine particles," Denshi Zairyou, Oct., 1994, pp. 1-9.*
"Ultra Fine Particle Conductive Paste for Low Firing Temperature Use," Journal of SHM, vol. 11, No. 1, pp. 28-31.*
"New method of forming a thin film using ultra fine particles," ULVAC Technical Journal, No. 40, pp. 14-20, 1993.*

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