Field emitter fabrication using megasonic assisted lift off

Details Field emitter fabrication using megasonic assisted lift off Field emitter fabrication using megasonic assisted lift off

1997-04-30

1999-12-28

Ramsey, Kenneth J.

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

H01J 902

Patent

active

060073969

ABSTRACT:
In a field emitter structure, a method for removing a lift-off layer and an overlying closure layer. In one embodiment, a field emitter structure includes a cavity formed into an insulating layer overlying at least a portion of a first electrically conductive layer. A second electrically conductive layer has an opening formed above the cavity. The second electrically conductive layer has lift-off layer and a closure layer disposed thereon. The present invention removes the lift-off layer and the closure layer from the second electrically conductive layer according to the following method. First, the present invention immerses the field emitter structure in an etchant which attacks the lift-off layer. Next, the present invention activates a transducer immersed in the etchant to subject the lift-off layer of the field emitter structure to vibrational forces generated by the transducer. The vibrational forces, in conjunction with the etchant, causes the lift-off layer and the overlying closure layer to be removed from the second electrically conductive layer. The present invention then removes the field emitter structure from the etchant, removes residual etchant from the field emitter structure, and dries the field emitter structure using a Marangoni drying process.

REFERENCES:
patent: 5534743 (1996-07-01), Jones et al.
patent: 5584739 (1996-12-01), Itoh et al.

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