Field emitter device, and veil process for THR fabrication there

Details Field emitter device, and veil process for THR fabrication there Field emitter device, and veil process for THR fabrication there

1995-08-24

1998-12-01

Patel, Ashok

Electric lamp and discharge devices

Discharge devices having a thermionic or emissive cathode

313495, 313355, 428938, H01J 2100

Patent

active

058443517

ABSTRACT:
A field emitter device formed by a veil process wherein a protective layer comprising a release layer is deposited on the gate electrode layer for the device, with the protective layer overlying the circumscribing peripheral edge of the opening of the gate electrode layer, to protect the edge of the gate electrode layer during etching of the field emitter cavity in the dielectric material layer on a substrate, and during the formation of a field emitter element in the cavity by depositing a field emitter material through the opening. The protective layer is readily removed subsequent to completion of the cavity etching and emitter formation steps, to yield the field emitter device. Also disclosed are various planarizing structures and methods, and current limiter compositions permitting high efficiency emission of electrons from the field emitter elements at low turn-on voltages.

REFERENCES:
patent: 2926286 (1960-02-01), Skellett
patent: 3665241 (1972-05-01), Spindt et al.
patent: 3753022 (1973-08-01), Fraser, Jr.
patent: 3921022 (1975-11-01), Levine
patent: 3935500 (1976-01-01), Oess et al.
patent: 3970877 (1976-07-01), Smith et al.
patent: 3982147 (1976-09-01), Redman
patent: 3998678 (1976-12-01), Fukase et al.
patent: 4008412 (1977-02-01), Yuito et al.
patent: 4095133 (1978-06-01), Hoeberechts
patent: 4163949 (1979-08-01), Shelton
patent: 4164680 (1979-08-01), Villalobos
patent: 4256532 (1981-03-01), Magdo et al.
patent: 4277883 (1981-07-01), Kaplan
patent: 4307507 (1981-12-01), Gray et al.
patent: 4325000 (1982-04-01), Wolfe et al.
patent: 4337115 (1982-06-01), Ikeda et al.
patent: 4341980 (1982-07-01), Noguchi et al.
patent: 4498952 (1985-02-01), Christensen
patent: 4513308 (1985-04-01), Greene et al.
patent: 4578614 (1986-03-01), Gray et al.
patent: 4614564 (1986-09-01), Sheldon et al.
patent: 4663559 (1987-05-01), Christensen
patent: 4670090 (1987-06-01), Sheng et al.
patent: 4683024 (1987-07-01), Miller et al.
patent: 4685996 (1987-08-01), Busta et al.
patent: 4724328 (1988-02-01), Lischke
patent: 4774433 (1988-09-01), Ikebe et al.
patent: 4818914 (1989-04-01), Brodie
patent: 4824795 (1989-04-01), Blanchard
patent: 4853545 (1989-08-01), Rose
patent: 4900981 (1990-02-01), Yamazaki et al.
patent: 4934773 (1990-06-01), Becker
patent: 4964946 (1990-10-01), Gray et al.
patent: 4990766 (1991-02-01), Simms et al.
patent: 5012153 (1991-04-01), Atkinson et al.
patent: 5030895 (1991-07-01), Gray
patent: 5053673 (1991-10-01), Tomii et al.
patent: 5063327 (1991-11-01), Brodie et al.
patent: 5070282 (1991-12-01), Epsztein
patent: 5129850 (1992-07-01), Kane et al.
patent: 5140219 (1992-08-01), Kane
patent: 5141459 (1992-08-01), Zimmerman
patent: 5141460 (1992-08-01), Jaskie et al.
patent: 5142184 (1992-08-01), Kane
patent: 5144191 (1992-09-01), Jones et al.
patent: 5164632 (1992-11-01), Yoshida et al.
patent: 5188977 (1993-02-01), Stengl et al.
patent: 5191217 (1993-03-01), Kane et al.
patent: 5204666 (1993-04-01), Aoki et al.
patent: 5216324 (1993-06-01), Curtin
patent: 5227769 (1993-07-01), Leksell et al.
patent: 5309169 (1994-05-01), Lippert
patent: 5313137 (1994-05-01), Witty
patent: 5371433 (1994-12-01), Horne et al.
patent: 5374868 (1994-12-01), Tjaden et al.
patent: 5384509 (1995-01-01), Kane et al.
patent: 5386175 (1995-01-01), Van Gorkom et al.
patent: 5406170 (1995-04-01), Uemura et al.
patent: 5457356 (1995-10-01), Parodos
patent: 5529524 (1996-06-01), Jones
patent: 5534743 (1996-07-01), Jones et al.
patent: 5548181 (1996-08-01), Jones
Warren, John B. "Control of silicon field emitter shape with isotropically etched oxide masks," Inst. Phys. Conf. Ser. No. 99: Section 2, 1989, pp. 37-40.

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