Field emitter array incorporated with metal oxide semiconductor

Details Field emitter array incorporated with metal oxide semiconductor Field emitter array incorporated with metal oxide semiconductor

1996-09-24

1998-03-24

Mintel, William

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

257 11, 257368, 313309, 313310, 313351, 437192, 437203, 437204, 437913, H01L 2906, H01L 2912

Patent

active

057315973

ABSTRACT:
The present invention provides field emitter arrays (FEAs) incorporated with metal oxide semiconductor field effect transistors (MOSFETs) and method for fabricating the same which realizes a simultaneous fabrication of two kinds of devices, namely, an FEA and MOSFETs, by using common processing steps among the processes of fabricating Si-FEAs or metal FEAs and MOSFETs, wherein the method comprises steps of forming field emission tips and active regions for MOSFETs by oxidizing selected portions of a silicon nitride layer, forming a gate insulating oxide layer for the FEA and field oxide layers for MOSFETs simultaneously by the LOGOS method and connecting gate electrodes (row line) and cathode electrodes (column line) of the FEA to MOSFETs.

REFERENCES:
patent: 5212426 (1993-05-01), Kane
patent: 5268648 (1993-12-01), Calcatera
patent: 5319233 (1994-06-01), Kane
patent: 5359256 (1994-10-01), Gray
patent: 5585301 (1996-12-01), Lee et al.
patent: 5585689 (1996-12-01), Imura et al.

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