Field emission vacuum devices

Details Field emission vacuum devices Field emission vacuum devices

1987-09-03

1989-05-02

DeMeo, Palmer C.

Electric lamp and discharge devices

Discharge devices having three or more electrodes

313309, 313336, 313355, H01J 1924, H01J 1938, H01J 1946

Patent

active

048271772

ABSTRACT:
A vacuum valve device comprises a substrate on which is formed an updoped silicon layer from which a silicon dioxide layer is grown. First, second and third electrode structures are formed on the silicon dioxide layer by depositing a metallic layer and etching away unwanted portions of the layer. The first electrode structure has a pointed end and/or a sharp edge and/or is formed of low work function material so that, when a suitable voltage is applied between the first and third electrode structures, electrons are emitted from the first electrode structure due to a field emission process. Electrons therefore flow from the first to the third electrode structure substantially parallel to the substrate. The second electrode structure acts as a control electrode.

REFERENCES:
patent: 3359448 (1967-12-01), Bashara et al.
patent: 3678325 (1972-07-01), Nishida et al.
patent: 3748522 (1973-07-01), Geppert
patent: 3788723 (1974-01-01), Lehrer
patent: 4578614 (1986-03-01), Gray et al.
patent: 4712039 (1987-12-01), Hong
patent: 4728851 (1988-03-01), Lambe

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