Field emission type electron emitting device with convex insulat

Details Field emission type electron emitting device with convex insulat Field emission type electron emitting device with convex insulat

1995-08-08

1998-08-11

O'Shea, Sandra L.

Electric lamp and discharge devices

Discharge devices having three or more electrodes

313309, 313310, 313336, 313346R, 313351, H01J 146, H01J 2110, H01J 102, H01J 116

Patent

active

057931534

ABSTRACT:
In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55.degree. with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.

REFERENCES:
patent: 4168213 (1979-09-01), Hoeberechts
patent: 5319233 (1994-06-01), Kane
patent: 5381069 (1995-01-01), Itoh et al.
patent: 5502314 (1996-03-01), Hori
31-a-NC-4 Electrical Characteristics of Si-Film Field Emitter, C. Nureki et al., Extended Abstracts (The 39th Spring Meeting, 1992); The Japan Society of Applied Physics and Related Societies, p. 578 (1992).
Junji Itoh, Kazunari Ushiki, Kazuhiko Tsuburaya and Seigo Kanemaru, "Vacuum Microtriode with Comb-Shaped Lateral Field-Emitter Array," Japanese Journal of Applied Physics, vol. 32, No. 6A, Jun. 1, 1933, pp. L809-L812.

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