Field emission type electron emitting device and method of produ

Details Field emission type electron emitting device and method of produ Field emission type electron emitting device and method of produ

1998-04-14

1999-02-02

Niebling, John F.

Semiconductor device manufacturing: process

Electron emitter manufacture

H01L 2100

Patent

active

058664386

ABSTRACT:
In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55.degree. with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.

REFERENCES:
patent: 4168213 (1979-09-01), Hoeberechts
patent: 5319233 (1994-06-01), Kane
patent: 5381069 (1995-01-01), Itoh et al.
patent: 5502314 (1996-03-01), Hori
"Electrical Characteristics of Si-Film Fields Emitter," C. Nureki et al., Extended Abstracts (The 39th Spring Meeting); The Japanese Society of Applied Physics and Realted Societies, p. 578.
"Vacuum Microtriode with Comb-Shaped Lateral Field-Emitter Array," J. Itoh et al., Jpn. J. Appl. Phys. vol. 32 (1993) pp. L809-812 Part 2, No. 6A, 1 Jun. 1993.

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