Semiconductor device manufacturing: process – Electron emitter manufacture
Patent
1998-04-14
1999-02-02
Niebling, John F.
Semiconductor device manufacturing: process
Electron emitter manufacture
H01L 2100
Patent
active
058664386
ABSTRACT:
In a comb-like or wedge-like electron emitting device, an emitter or both an emitter and an anode electrode are processed from a single-crystal silicon thin film of an SOI wafer. The single-crystal silicon thin film in portions other than the processed portion is removed so that the silicon oxide layer is dug down further slightly. A gate electrode for applying an electric field in order to draw electrons out of the emitter is provided in the dug-down portion. When the end and side faces of the emitter are formed as (111) faces by anisotropic etching in the condition that the single-crystal silicon thin film is oriented to a (100) face, the emitter has a sharp edge at about 55.degree. with respect to the substrate. In a conical electron emitting device, the gate electrode is constituted by a single-crystal silicon thin film of an SOI wafer so that a pyramid surrounded by the (111) faces is formed on the single-crystal silicon substrate.
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patent: 4168213 (1979-09-01), Hoeberechts
patent: 5319233 (1994-06-01), Kane
patent: 5381069 (1995-01-01), Itoh et al.
patent: 5502314 (1996-03-01), Hori
"Electrical Characteristics of Si-Film Fields Emitter," C. Nureki et al., Extended Abstracts (The 39th Spring Meeting); The Japanese Society of Applied Physics and Realted Societies, p. 578.
"Vacuum Microtriode with Comb-Shaped Lateral Field-Emitter Array," J. Itoh et al., Jpn. J. Appl. Phys. vol. 32 (1993) pp. L809-812 Part 2, No. 6A, 1 Jun. 1993.
Itoh Junji
Matsuzaki Kazuo
Nishizawa Masato
Ryokai Yoichi
Uematsu Takahiko
Director-General, Jiro Hiraishi, Agency of Industrial Science an
Fuji Electric & Co., Ltd.
Niebling John F.
Zarneke David A.
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