Field emission type cold cathode apparatus and method of manufac

Details Field emission type cold cathode apparatus and method of manufac Field emission type cold cathode apparatus and method of manufac

1997-01-24

1999-04-27

Ramsey, Kenneth J.

Electric lamp and discharge devices

Discharge devices having a multipointed or serrated edge...

438 20, 445 24, 445 50, 313311, H01J 130

Patent

active

058982582

ABSTRACT:
A field emission type cold cathode apparatus comprises a mother material layer made of an n-type silicon layer, a conical emitter having an arcuate side surface, an insulating layer formed in a surface region of the mother material layer in a manner to define the arcuate side surface of the emitter and having a concave portion formed to expose the tip portion of the conical emitter, the depth of the concave portion being determined such that the lower portion of the emitter covering a region more than half the height of the emitter is buried in the insulating layer, and a gate electrode formed over the insulating film in a manner to surround the emitter and having an open portion exposing the tip portion of the emitter, the diameter of the open portion being smaller than the diameter in the base portion of the emitter.

REFERENCES:
patent: 3970887 (1976-07-01), Smith et al.
patent: 5358908 (1994-10-01), Reinberg et al.
patent: 5420054 (1995-05-01), Choi et al.
patent: 5483118 (1996-01-01), Nakamoto et al.
patent: 5499938 (1996-03-01), Nakamoto et al.
J. Vac. Sci. Technol. B 14(3), May/Jun. 1996, pp. 1906-1909, Donghwan Kim, et al. "Fabrication of Silicon Field Emitters by Forming Porous Silicon".

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