Field emission type cold cathode and method of manufacturing...

Semiconductor device manufacturing: process – Electron emitter manufacture

Reexamination Certificate

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Details

C313S309000, C313S351000, C977S742000, C977S939000

Reexamination Certificate

active

10481130

ABSTRACT:
A field emission type cold cathode, comprising a substrate having a conductivity at least on the surface thereof, an insulation layer formed on the substate and having a first opening part, a gate electrode layer formed on the insulation layer, having a center generally aligned with the center of the first opening part, and having, therein, a second opening part having an opening diameter larger than the opening diameter of the first opening part, and an emitter layer formed in the first opening part, the emitter layer characterized by further comprising the bottom surface and the side surfaces of the first opening part.

REFERENCES:
patent: 3789471 (1974-02-01), Spindt et al.
patent: 5214347 (1993-05-01), Gray
patent: 5315206 (1994-05-01), Yoshida
patent: 5382185 (1995-01-01), Gray et al.
patent: 5656525 (1997-08-01), Lin et al.
patent: 5679960 (1997-10-01), Akama
patent: 5757138 (1998-05-01), Tsai
patent: 5801477 (1998-09-01), Macaulay
patent: 6005335 (1999-12-01), Potter
patent: 6008062 (1999-12-01), Knall
patent: 6015324 (2000-01-01), Potter
patent: 6028391 (2000-02-01), Makishima
patent: 6075315 (2000-06-01), Seko et al.
patent: 6121102 (2000-09-01), Norstrom et al.
patent: 6171163 (2001-01-01), Seko et al.
patent: 6181060 (2001-01-01), Rolfson
patent: 6277318 (2001-08-01), Bower et al.
patent: 6333598 (2001-12-01), Hsu et al.
patent: 6445124 (2002-09-01), Asai et al.
patent: 6448701 (2002-09-01), Hsu
patent: 6642639 (2003-11-01), Choi et al.
patent: 6649431 (2003-11-01), Merkulov et al.
patent: 6657242 (2003-12-01), Norstrom et al.
patent: 6741019 (2004-05-01), Filas et al.
patent: 6815875 (2004-11-01), Kuo et al.
patent: 6852554 (2005-02-01), Chen et al.
patent: 2001/0024920 (2001-09-01), Tjaden et al.
patent: 2001/0040215 (2001-11-01), Ahmed et al.
patent: 2002/0009943 (2002-01-01), Ito
patent: 2002/0055319 (2002-05-01), Hsu
patent: 2002/0160111 (2002-10-01), Sun et al.
patent: 2002/0175618 (2002-11-01), Lee et al.
patent: 2002/0197752 (2002-12-01), Choi
patent: 2003/0059968 (2003-03-01), Cheng et al.
patent: 2003/0090190 (2003-05-01), Takai et al.
patent: 63-261878 (1988-10-01), None
patent: 8-231210 (1996-09-01), None
patent: 8-236013 (1996-09-01), None
patent: 9-221309 (1997-08-01), None
patent: 2000-141056 (2000-05-01), None
patent: 2000-156147 (2000-06-01), None
patent: 2000-340098 (2000-12-01), None
patent: 2001-118488 (2001-04-01), None

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