Semiconductor device manufacturing: process – Electron emitter manufacture
Reexamination Certificate
2007-09-04
2007-09-04
Baumeister, B. William (Department: 2891)
Semiconductor device manufacturing: process
Electron emitter manufacture
C313S309000, C313S351000, C977S742000, C977S939000
Reexamination Certificate
active
10481130
ABSTRACT:
A field emission type cold cathode, comprising a substrate having a conductivity at least on the surface thereof, an insulation layer formed on the substate and having a first opening part, a gate electrode layer formed on the insulation layer, having a center generally aligned with the center of the first opening part, and having, therein, a second opening part having an opening diameter larger than the opening diameter of the first opening part, and an emitter layer formed in the first opening part, the emitter layer characterized by further comprising the bottom surface and the side surfaces of the first opening part.
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Baumeister B. William
NEC Corporation
Such Matthew W.
Young & Thompson
LandOfFree
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