Field emission RF amplifier

Details Field emission RF amplifier Field emission RF amplifier

2006-09-12

2006-09-12

Vo, Tuyet Thi (Department: 2821)

Miscellaneous active electrical nonlinear devices, circuits, and

Gating

Superconductive device

C327S370000, C327S366000, C313S588000, C313S587000

Reexamination Certificate

active

07106124

ABSTRACT:
A field emission RF amplifier. The field emission RF amplifier includes one or more RF amplification units on a substrate and held in a vacuum state and facing a reflection electrode. The RF amplification unit includes a cathode electrode, gate electrode, and an anode electrode all formed on the same substrate. The cathode electrode has a CNT emitter. A DC voltages are applied to the cathode and anode electrodes. An RF signal is input at the cathode electrode and is amplified and output at the anode electrode. Capacitors and inductors are arranged to filter out AC and DC components where needed. An improved amplification of RF signals with high electron mobility and good impedance matching abilities result.

REFERENCES:
patent: 5492011 (1996-02-01), Amano et al.
patent: 2004/0150311 (2004-08-01), Jin
patent: 2005/0181587 (2005-08-01), Duan et al.
Silicon Field Emitter Arrays with Low Capacitance and Improved Transconductance for Microwave Amplifier Applications; J. Vac. Sci. Technol. B 13(2), Mar./Apr. 1995; pp. 576-579.

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