Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1995-06-07
1998-12-01
Whitehead, Carl W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257623, 257628, 313311, 313355, 313336, 313309, 445 49, 445 51, H01L 2912, H01J 114, H01J 148, H01J 912
Patent
active
058442502
ABSTRACT:
A process for manufacturing a field emission element including a substrate, and an emitter and a gate each arranged on the substrate is provided. The emitter is formed at at least a tip portion thereof with an electron discharge section, which is formed of metal or semiconductor into a monocrystalline structure or a polycrystalline structure preferentially oriented in at least a direction perpendicular to the substrate by deposition.
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Itoh Shigeo
Yamada Isao
Futaba Denshi Kogyo K.K
Tang Alice W.
Whitehead Carl W.
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