Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1994-07-01
1996-03-26
Saadat, Mahshid
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257 11, 257623, 257628, 313308, 313309, 313351, H01L 2906, H01L 2912, H01L 2904, H01J 146
Patent
active
055023142
ABSTRACT:
The invention is a field-emission element that is fabricated by forming an elevated surface and a base surface on a conductive substrate or a semiconductor substrate by applying a photolithographic process and an etching process, and making these surfaces cross at a step with an acute angle between the two surfaces. The intersection of the elevated surface with the step form a cathode having a radius of curvature of less than 20 nm. A gate electrode formed on the base electrode but insulated therefrom is disposed at a distance less than 1 .mu.m from said cathode by controlling the distance by the thickness of an etching protection mask. The field-emission element enables electrons to be emitted from the cathode when a voltage less than 150V is applied between the cathode and the gate electrode.
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Junji Itoh et al., Japanese Journal of Applied Physics, No. 3A, Part 1, pp. 1221-1226 (Mar. 1993).
H. Gray, Almquist & Wiksell International, Stockholm, Sweden, "Silicon Field Emitter Array Technology", pp. 111-117 (1982).
C. Spindt et al., "Field Emission Cathode Array Development for High Current Density Applications", p. 119.
C. Spindt et al., Journal of Applied Physics, vol. 47, No. 12, pp. 5248-5263 (1976).
Matsushita Electric - Industrial Co., Ltd.
Saadat Mahshid
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