Field-emission electron source and method of manufacturing the s

Details Field-emission electron source and method of manufacturing the s Field-emission electron source and method of manufacturing the s

1997-12-22

1999-04-27

Powell, William

Etching a substrate: processes

Forming or treating an article whose final configuration has...

216 25, 216 56, B44C 122

Patent

active

058977902

ABSTRACT:
A withdrawn electrode is formed on a silicon substrate with intervention of upper and lower silicon oxide films each having circular openings corresponding to regions in which cathodes are to be formed. Tower-shaped cathodes are formed in the respective openings of the upper and lower silicon oxide films and of the withdrawn electrode. Each of the cathodes has a sharply tapered tip portion having a radius of 2 nm or less, which has been formed by crystal anisotropic etching and thermal oxidation process for silicon. The region of the silicon substrate exposed in the openings of the upper and lower silicon oxide films and the cathode have their surfaces coated with a thin surface coating film made of a material having a low work function.

REFERENCES:
patent: 4663559 (1987-05-01), Christensen
patent: 5090932 (1992-02-01), Dieumegard et al.
patent: 5312514 (1994-05-01), Kumar
patent: 5532177 (1996-07-01), Cathey
K. Koga et al.: "New Structure Si Filed Emitter Arrays With Low Operation Voltage", 1995 IEEE International Conference On Systems, Man and Cybernetics, Vancouver, Oct. 22-25, 1995, vol. 1, Inst. of Electrical and Electronics Engineers, pp. 23-26, XP000585429.
Yoshikazu Hori et al.: "Tower Structure S1 Filed Emitter Arrays with Large Emission Current", Technical Digest of the International Electron Devices Meeting (IEDM), Wash., DC 10-13, 1995, Institute of Electrical and Electronic Engineers, pp. 393-396, XP 000624744.
Takai et al., "Enhancement in emission current from dry-processed n-type Si field emitter arrays after tip anodization", J. Vac. Sci. Technology B13(2), pp. 441-444, 1995.

Affiliated with

Also associated with

Rating

Field-emission electron source and method of manufacturing the s does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field-emission electron source and method of manufacturing the s, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field-emission electron source and method of manufacturing the s will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-684129