Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1998-11-19
2000-05-16
Jackson, Jr., Jerome
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257 9, 257755, 257757, 257764, 313311, H01L 2906, H01J 105
Patent
active
060640758
ABSTRACT:
Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.
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Cathey, Jr. David A.
Lee John K.
Moradi Behnam
Zhang Tianhong
Baumeister B. William
Jackson, Jr. Jerome
Micro)n Technology, Inc.
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