Field emission displays with reduced light leakage

Details Field emission displays with reduced light leakage Field emission displays with reduced light leakage

1998-11-19

2000-02-15

Ramsey, Kenneth J.

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

H01J 902

Patent

active

060246200

ABSTRACT:
Semiconductor devices may be made by forming a silicided layer on a silicon material such as that used to form the extractor of a field emission display. The silicided layer may be self-aligned with the emitter of a field emission display. If the silicided layer is treated at a temperature above 1000.degree. C. by exposure to a nitrogen source, the silicide is resistant to subsequent chemical attack such as that involved in a buffered oxide etching process.

REFERENCES:
patent: 4800171 (1989-01-01), Iranmanesh et al.
patent: 5769679 (1998-06-01), Park et al.

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