Semiconductor device manufacturing: process – Electron emitter manufacture
Reexamination Certificate
2006-05-30
2006-05-30
Coleman, W. David (Department: 2823)
Semiconductor device manufacturing: process
Electron emitter manufacture
C445S046000, C427S077000
Reexamination Certificate
active
07052923
ABSTRACT:
This invention provides a conductive aluminum film and method of forming the same, wherein a non-conductive impurity is incorporated into the aluminum film. In one embodiment, the introduction of nitrogen creates an aluminum nitride subphase which pins down hillocks in the aluminum film to maintain a substantially smooth surface. The film remains substantially hillock-free even after subsequent thermal processing. The aluminum nitride subphase causes only a nominal increase in resistivity (resistivities remain below about 12 μΩ-cm), thereby making the film suitable as an electrically conductive layer for integrated circuit or display devices.
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Coleman W. David
Knobbe Martens Olson & Bear LLP
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