Field emission display with double gate structure and method...

Details Field emission display with double gate structure and method... Field emission display with double gate structure and method...

2006-06-06

2006-06-06

Pham, Long (Department: 2814)

Semiconductor device manufacturing: process

Electron emitter manufacture

C438S022000, C257S010000, C257S011000, C257S144000

Reexamination Certificate

active

07056753

ABSTRACT:
A field emission display with a double gate structure and a method of manufacturing therefor are provided. The field emission display includes a substrate, a cathode layer formed on the substrate, a gate insulating layer which is formed on the substrate and the cathode layer and has a cavity through which part of the cathode layer is exposed, a field emitter provided on the cathode layer exposed on the bottom of the cavity, a first gate layer which is formed in the gate insulating layer and in which a first gate hole having a diameter greater than that of the cavity is formed not to be exposed to an inner surface of the cavity, and a second gate layer which is formed on the gate insulating layer and in which a second gate hole is formed in a portion that corresponds to the cavity.

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patent: 5986388 (1999-11-01), Makishima
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patent: 7-29484 (1995-01-01), None
patent: 2002-373570 (2002-12-01), None
Korean Patent Official Action and English Translation dated Jan. 27, 2005.

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