Field emission display with diode-limited cathode current

Details Field emission display with diode-limited cathode current Field emission display with diode-limited cathode current

1996-08-01

1998-12-08

Patel, Nimeshkumar

Electric lamp and discharge devices

With luminescent solid or liquid material

Vacuum-type tube

313309, 313336, 313351, H01J 162, H01J 6304, H01J 102, H01J 116

Patent

active

058475044

ABSTRACT:
A pixel emission current limiting resistance is realized by forming a stack of alternately doped amorphous or polycrystalline silicon layers over the cathodic conductors of a FED driving matrix. The stack of amorphous or polycrystalline silicon layers doped alternately n and p provides at least a reversely biased n/p junction having a leakage current that matches the required level of pixel emission current. The reversely biased junction constitutes a nonlinear series resistance that is quite effective in limiting the emission current through any one of the microtips that form an individually excitable pixel and which are formed on the uppermost layer of the stack.

REFERENCES:
patent: 3882355 (1975-05-01), DeWitt
patent: 4513308 (1985-04-01), Greene et al.
patent: 5162704 (1992-11-01), Kobori et al.
patent: 5572041 (1996-11-01), Betsui et al.
patent: 5656886 (1997-08-01), Westphal et al.
patent: 5688707 (1997-11-01), Lee et al.

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