Field emission display device fabrication method

Semiconductor device manufacturing: process – Electron emitter manufacture

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438978, 313336, 445 50, 445 51, 378122, H01L 2100, H01L 214763, H01J 116, H01J 904

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059665882

ABSTRACT:
An improved field emission display device fabrication method which adopts both a silicon wafer direct bonding method and a mold method so as to fabricate an improved field emission display device, which includes the steps of a first step which forms a tip array by a molding method; and a second step which bonds the tip array to a second semiconductor substrate.

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Sokolich et al., Field Emission From Submicron Emitter Arrays, IEDM (International Electron Devices Meeting) Technical Digest, pp. 159-162 (1990).
Nakamoto et al., "Fabrication of Gated Field Emitter Arrays by Transfer Mold Technique", Revue "Le Vide, les Couches Mines"-Supplement au N.degree.271-Mars-Pvril, p. 4144 (1994).

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