Field emission display and method of making same

Details Field emission display and method of making same Field emission display and method of making same

1996-11-06

2000-02-08

Ryan, Patrick

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

445 50, H01J 130, H01J 902

Patent

active

060222565

ABSTRACT:
A low temperature method of sharpening the emission tip of a field emission display includes the step of oxidizing the silicon substrate and the emission tip in an atmosphere of oxygen and ozone at temperatures below 800.degree. C. The oxidation step forms an oxide layer on the emission tip without significant flow of oxide or silicon during oxidation. The oxide layer is subsequently etched to expose the emission tip.

REFERENCES:
patent: 3665241 (1972-05-01), Spindt et al.
patent: 3721022 (1973-03-01), Mercorelli
patent: 3755704 (1973-08-01), Spindt et al.
patent: 3789471 (1974-02-01), Spindt et al.
patent: 3812559 (1974-05-01), Spindt et al.
patent: 3875442 (1975-04-01), Wasa et al.
patent: 3921022 (1975-11-01), Levine
patent: 3970887 (1976-07-01), Smith et al.
patent: 3998678 (1976-12-01), Fukase et al.
patent: 4095133 (1978-06-01), Hoeberechts
patent: 4663559 (1987-05-01), Christensen
patent: 4666553 (1987-05-01), Blumenfeld et al.
patent: 4671851 (1987-06-01), Beyer et al.
patent: 4746629 (1988-05-01), Hanagasaki
patent: 4763187 (1988-08-01), Biberian
patent: 4766340 (1988-08-01), van der Mast et al.
patent: 4857161 (1989-08-01), Borel et al.
patent: 4857799 (1989-08-01), Spindt et al.
patent: 4943343 (1990-07-01), Bardai et al.
patent: 4964946 (1990-10-01), Gray et al.
patent: 5012153 (1991-04-01), Atkinson et al.
patent: 5036015 (1991-07-01), Sandhu et al.
patent: 5038070 (1991-08-01), Bardai et al.
patent: 5055158 (1991-10-01), Gallagher et al.
patent: 5057047 (1991-10-01), Greene et al.
patent: 5070282 (1991-12-01), Epsztein
patent: 5075591 (1991-12-01), Holmberg
patent: 5143820 (1992-09-01), Kotecha et al.
patent: 5151061 (1992-09-01), Sandhu
patent: 5186670 (1993-02-01), Doan et al.
patent: 5188977 (1993-02-01), Stengl et al.
patent: 5191217 (1993-03-01), Kane et al.
patent: 5199917 (1993-04-01), MacDonald et al.
patent: 5209687 (1993-05-01), Konishi
patent: 5229331 (1993-07-01), Doan et al.
patent: 5232549 (1993-08-01), Cathey et al.
patent: 5259799 (1993-11-01), Doan et al.
patent: 5266530 (1993-11-01), Bagley et al.
patent: 5302238 (1994-04-01), Roe et al.
patent: 5372973 (1994-12-01), Doan et al.
patent: 5378182 (1995-01-01), Liu
patent: 5394006 (1995-02-01), Liu
patent: 5527200 (1996-06-01), Lee et al.
patent: 5653619 (1997-08-01), Cloud et al.
patent: 5683282 (1997-11-01), Liu et al.
patent: 5696028 (1997-12-01), Rolfson et al.
M. Sokolich et al., "Field Emission From Submicron Emitter Arrays," IEEE, International Electron Devices Meeting, San Francisco, CA., Dec. 9-12, 1990, pp. 159-162.
Liut et al., "Fabrication of self-aligned gated field emitters," Micromech. Microeng. 2 (1992) 21-24.
"Extended Abstracts," The Japan Society of Applied Physics, (The 53.sup.rd Autumn Meeting, 1992), p. 553.
Stanley Wolf Ph.D., "Silicon Processing For The VLSI Era," vol. 2: Process Integration, p. 239 (STIC: Feb. 1994).

Affiliated with

Also associated with

Rating

Field emission display and method of making same does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field emission display and method of making same, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field emission display and method of making same will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1676810