Field emission devices having diamond field emitter, methods for

Details Field emission devices having diamond field emitter, methods for Field emission devices having diamond field emitter, methods for

1996-07-25

1998-12-01

Monin, Donald

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

257 77, 313309, 313355, H01J 102, H01J 114

Patent

active

058442529

ABSTRACT:
A field emission device according to the present invention comprises a support substrate; a cathode mounted on a surface of said support substrate; a first diamond portion located on any surface of said substrate, said first diamond portion substantially having an electrical connection with said cathode; a second diamond portion located on the substrate surface on which said first diamond portion is also located, said second diamond portion including plurality of diamond protuberances; and an anode positioned spaced apart from said first and second diamond portions, wherein a space is formed between said anode and said second diamond portion.

REFERENCES:
patent: 4957591 (1990-09-01), Sato et al.
patent: 5138237 (1992-08-01), Kane et al.
patent: 5341063 (1994-08-01), Kumar
patent: 5399238 (1995-03-01), Kumar
patent: 5449435 (1995-09-01), Ageno et al.
Geis et al., "Diamond Cold Cathode", IEEE Electron Device Letters, vol. 12, No., 8, Aug. 1, 1991, pp. 456-459.
J.F. Prins, "Bipolar transistor action in ion implanted diamond", Applied Physics Letters, vol. 41, No. 10, Nov. 15, 1982, pp. 950-052.
Okano et al., "Fabrication of a diamond field emitter array", Appl. Phys. Lett. 64 (20), 16 May 1994.

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