Field emission device with low driving voltage

Details Field emission device with low driving voltage Field emission device with low driving voltage

1997-10-15

1999-08-17

Philogene, Haissa

Electric lamp and discharge devices: systems

Plural power supplies

Plural cathode and/or anode load device

345 74, 313309, G09G 310

Patent

active

059398337

ABSTRACT:
The present invention relates to a field emission display which applies a field emission device (or field emitter) to a flat panel display. The field emission display in accordance with the present invention has the lower plate in which the pixel array and the scan and data driving circuits are integrated one insulating substrate, therefore, it is possible to implement a field emission display capable of providing a high quality picture in a low price. The voltage is applied to the scan and data driving circuits may considerably decrease through the tin film transistor attached to each pixel. The field emission characteristics are stabilized by the resistor attached to the field emission device so that reliable field emission display may be fabricated. Further, since all the processes are carried out at a low temperature, a glass, which is low in price and has a large area, may be used as an insulating substrate.

REFERENCES:
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patent: 5412285 (1995-05-01), Komatsu
patent: 5485019 (1996-01-01), Yamazaki et al.
patent: 5543947 (1996-08-01), Mase et al.
patent: 5744914 (1998-04-01), Konishi
Active Control of the Emission Current of Field Emitter Arrays, Kuniuyoshi Yokoo, Manabu Arai, Masahiro Mori, Jongsuck Bae, and Shoichi Ono, Research Institute of Electrical Communication, Tohoku University, Katahira Sendai 980-77, Japan; J. Vac. Sci. Technol. B 12(2), Mar./Apr. 1995, pp. 491-493.
Microtips and Resistive Sheet: A Theoretical Description of the Emissive Properties of this System, 9th International Vacuum Microelectronics Conference, St. Petersburg 1996, R. Baptist, F. Bachelet and C. Constancias, pp. 19-23.
Fabrication of Gated Polycrystalline Silicon Field Emitters, 9th International Vacuum Microelectronics Conference, St. Petersburg 1996, S.E. Hug, M. Huang, P.R. Wilshaw and P.D. Prewett, pp. 367-370.
Amorphous-Silicon-on-Gas Field Emitter Arrays, IEEE Electron Device Letters, vol. 17, N o. 6, Jun. 1996, Hidenori Gamo, Seigo Kanemaru and Junji Itoh, pp. 261-263.

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