Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1996-12-13
1997-12-09
Tran, Minh-Loan
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257 77, 313309, 313336, 313351, H01L 2906
Patent
active
056963858
ABSTRACT:
A method for fabricating a diamond-like carbon field emission device (300, 800) includes the steps of: (i) forming on a column conductor (330, 830) a ballast layer (364), (ii) forming on the ballast layer (364), in registration with a central well region (332, 832) of the column conductor (330, 830), a surface emitter (370, 870) made from diamond-like carbon, (iii) forming on the ballast layer (364) and surface emitter (370, 870) a field shaping layer (374), (iv) pattering the ballast layer (364) and the field shaping layer (374) to form a ballast (365) and field shaper layer (377) having opposed edges which, with the opposed edges of the column conductor (330, 830), define smooth, continuous surfaces (371, 871), (v) depositing a blanket dielectric layer (341), and (vi) forming an emission well (360, 860) above the central well region (332, 832) of the column conductor (330, 830).
REFERENCES:
patent: 5420443 (1995-05-01), Dreifus et al.
patent: 5606215 (1997-02-01), Jaskie et al.
Jayshree Seth et al., "Lithographic Application of Diamond-Like Carbon Films", Thin Solid Films vol. 254, 1995, pp. 92-95. no month.
D. Wang et al., "Lithography Using Electron Beam Induced Etching of a Carbon Film", J. Vac. Sci. Technol., Sep./Oct. 1995, pp. 1984-1987.
Nilsson Thomas
Song John
Motorola
Parsons Eugene A.
Tran Minh-Loan
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