Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1997-06-24
1999-01-26
Thomas, Tom
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
257 11, 313308, 313309, 313336, 313351, 313495, 313496, 313497, H01J 102
Patent
active
058641475
ABSTRACT:
A field emission device is configured so as to suppress any deviation of the central axis of the distribution of emitted electrons from a conical cathode, with no electrode in addition to the gate electrode. A conductive layer is disposed over an insulating layer and has an electron emission window disposed over the conical cathode. Plural curved slits are formed in the conductive layer so as to expose the insulating layer and are arranged along a circle which is concentric with the tip of the conical cathode. The gate electrode is formed by the portion of conductive layer between the electron emission window and the curved slits. The portion of the conductive layer outside of the curved slits serves to distribute an applied potential to the gate electrodes of plural field emission devices arranged in a matrix. The portions of the conductive layer disposed between the curved slits serve to connect the gate electrode to the outer portion of the conductive layer. By selection of the physical geometry of the gate electrode, the field emission window, and the curved slits, and/or by selection of the relative doping concentrations of the gate electrode and the portions of the conductive layer disposed between the curved slits, any deviation in the emission direction of the electrons is automatically compensated for by a deviation in the voltage dropped by a portion of the gate electrode into which a disproportionate amount of electrons have been emitted.
REFERENCES:
patent: 4574216 (1986-03-01), Hoeberechts et al.
patent: 5396150 (1995-03-01), Wu et al.
patent: 5581146 (1996-12-01), Pribat et al.
Journal of Applied Physics, vol. 47, No. 2, pp. 5248-5263, "Physical Properties of thin-film field emission cathodes with molybdenum cones", C.A. Spindt, published Dec. 1996.
IEEE Journal, IEDM 86, pp. 776-779, "A Vacuum Field Effect Transistor using Silicon Field Emitter Arrays", H.F. Gray, G.J. Campisi and R.F. Greene.
Abraham Fetsum
NEC Corporation
Thomas Tom
LandOfFree
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