Field emission device having a charge bleed-off barrier

Details Field emission device having a charge bleed-off barrier Field emission device having a charge bleed-off barrier

1996-10-08

1998-02-17

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

313336, 438 20, H01L 2906, H01L 2912

Patent

active

057194068

ABSTRACT:
An improved field emission device (200, 800) includes a supporting substrate (210, 810), a conductive layer (215, 815) formed on the supporting substrate (210,810), a dielectric layer (240, 840) formed on the conductive layer (215, 815) and defining an emitter well (260, 860), a charge bleed-off barrier (290, 890)provided on the lateral surfaces (245, 845) of the emitter well, an electron emitter (270, 870) located within the emitter well (260, 860), a gate extraction electrode (250, 850) formed on the dielectric layer (240, 840) and spaced from the electron emitter (270, 870), and an anode (280, 880) spaced from the gate extraction electrode (250, 850).

REFERENCES:
patent: 5126287 (1992-06-01), Jones
patent: 5188977 (1993-02-01), Stengl et al.
patent: 5442193 (1995-08-01), Jaskie et al.
patent: 5668437 (1997-09-01), Chadha et al.

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