Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Reexamination Certificate
2006-05-16
2006-05-16
Flynn, Nathan J. (Department: 2826)
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
C257S011000, C438S020000
Reexamination Certificate
active
07045807
ABSTRACT:
A field emission device, a field emission display for displaying images with good quality adopting the same, and a manufacturing method thereof are provided. The field emission device allows a mesh grid to closely contact the surface of a field emission array on a substrate and for this purpose, applies a tensile force to the mesh grid using a predetermined tension member.
REFERENCES:
patent: 5710483 (1998-01-01), Peng
patent: 2004/0145928 (2004-07-01), Seon et al.
patent: 2000-7115 (2000-02-01), None
Flynn Nathan J.
Samsung SDI & Co., Ltd.
Wilson Scott R
LandOfFree
Field emission device, field emission display adopting the... does not yet have a rating. At this time, there are no reviews or comments for this patent.
If you have personal experience with Field emission device, field emission display adopting the..., we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field emission device, field emission display adopting the... will most certainly appreciate the feedback.
Profile ID: LFUS-PAI-O-3541452