Field emission device employing a selective electrode deposition

Metal working – Barrier layer or semiconductor device making – Barrier layer device making

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437203, 445 50, B23B 528, H01L 21302

Patent

active

052493407

ABSTRACT:
A method of forming a field emission device including the steps of selective deposition of a column/ridge within the confines of a conformally deposited insulator layer and subsequent directional deposition to form a cone/wedge, having a geometric discontinuity of small radius of curvature, on the column/ridge is provided.

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patent: 3812559 (1972-05-01), Spindt et al.
patent: 4324999 (1982-04-01), Wolfe
patent: 4663559 (1987-05-01), Christensen
patent: 4835438 (1989-05-01), Baptist et al.
patent: 5064396 (1991-11-01), Spindt
patent: 5087591 (1992-02-01), Teng
patent: 5136764 (1992-08-01), Vasquez

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