Field emission device, display adopting the same and method...

Details Field emission device, display adopting the same and method... Field emission device, display adopting the same and method...

2006-11-07

2006-11-07

Smith, Matthew (Department: 2823)

Semiconductor device manufacturing: process

Electron emitter manufacture

C345S075200, C977S939000, C257SE51040

Reexamination Certificate

active

07132304

ABSTRACT:
A field emission device comprises a glass substrate, an emitter electrode formed on the glass substrate, a carbon nanotube (CNT) emitter formed on the emitter electrode, and a gate stack formed around the CNT emitter for extracting electron beams from the CNT emitter and focusing the extracted electron beams onto a given position. The gate stack includes a mask layer covering the emitter electrode and provided around the CNT emitter, a gate insulating layer formed on the mask layer to a predetermined height, a mirror electrode formed on an inclined plane of the gate insulating layer, a gate electrode formed on the gate insulating layer and spaced apart from the mirror electrode, and a focus gate insulating layer and a focus gate electrode sequentially formed on the gate electrode. The field emission device is manufactured and employed in a display device in accordance with the present invention.

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