Field emission device and method of fabricating the same

Details Field emission device and method of fabricating the same Field emission device and method of fabricating the same

1998-01-05

2000-07-04

Patel, Vip

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

445 50, 313306, H01J 900

Patent

active

060830689

ABSTRACT:
A field emission device includes a field emission cathode electrode having a cusp, a first insulating layer on the field emission cathode electrode excluding a portion over the cusp, a first electrode on the first insulating layer, a second insulating layer on the first electrode, a second electrode on the second insulating layer, a third insulating layer on the second electrode, and a silicon substrate on the third insulating layer. A method of fabricating a field emission device having a semiconductor substrate includes the steps of sequentially forming first and second insulating layers on first and second surfaces of the substrate, removing the first and the second insulating layers from the first surface of the substrate, forming a third insulating layer and a first metallic layer on the first surface of the substrate, selectively removing the first insulating layer and the second insulating layer on the second surface of the semiconductor substrate to expose the substrate, forming a fourth insulating layer and a second metallic layer on the first metallic layer, forming a hole trench to expose the third insulating layer, forming a fifth insulating layer over an exposed front surface including the hole trench, forming a third metallic layer on the fifth insulating layer, anisotropically etching the silicon substrate from the second surface to expose the fifth insulating layer through the hole trench, and removing the fifth insulating layer in the hole trench.

REFERENCES:
patent: 5898258 (1999-04-01), Sakai et al.

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