Field emission device

Details Field emission device Field emission device

1995-12-15

1998-08-04

Patel, Nimeshkumar

Electric lamp and discharge devices

Electrode and shield structures

Point source cathodes

313309, 313351, H01T 130

Patent

active

057898510

ABSTRACT:
A field emission device has a basic substrate whose surface is coated with a conductive layer that forms an electrode. A field emission emitter which is formed as a micro-tip, is electrically connected to the electrode. Between the micro-tip and the electrode, a current limiting resistive silicon film is arranged and the resistivity of the silicon film is adjusted to be in a value ranging from about 10.sup.2 to about 10.sup.5 .OMEGA.cm by an n- or p-dopant. The silicon film contains an alloying element which would be able to form a silicon ceramic if used in a stoichiometric amount but would not be able to dope the silicon.

REFERENCES:
patent: 4377628 (1983-03-01), Ishioka et al.
patent: 4798739 (1989-01-01), Schmitt
patent: 4989543 (1991-02-01), Schmitt
patent: 5515986 (1996-05-01), Turlot et al.
patent: 5585301 (1996-12-01), Lee et al.

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