Field emission device

Details Field emission device Field emission device

1997-03-21

1998-12-08

Chaudhuri, Olik

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Low workfunction layer for electron emission

313310, 313336, H01L 2906

Patent

active

058474080

ABSTRACT:
A field emission device of simple structure enables stabilization and control of field emission current. Emission current is controlled by a plurality of control voltage systems. An emitter having a sharp tip is fabricated by processing a p-type semiconductor substrate, and an n-type source region is provided on the p-type semiconductor substrate surface at a position that is laterally separated from the emitter. An electrode layer having an aperture facing the apex portion of the emitter is provided on an insulating layer, the electrode layer extending to above the n-type source region. Voltage applied to the electrode layer to apply an extractor field to the apex portion of the emitter and to induce inversion layers at the emitter surface and the surface of the p-type semiconductor substrate. The electrode layer is divided into a plurality of electrodes. An extraction voltage is applied to one of these electrodes closest to the emitter, another electrode is connected to an X selection line and another to a Y selection line, thereby controlling emission current.

REFERENCES:
patent: 5162704 (1992-11-01), Korobi et al.
patent: 5455196 (1995-10-01), Frazier
patent: 5548181 (1996-08-01), Jones

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