Semiconductor device manufacturing: process – Electron emitter manufacture
Patent
1998-06-15
2000-03-28
Niebling, John F.
Semiconductor device manufacturing: process
Electron emitter manufacture
445 46, 445 49, 445 50, 445 51, H01L 2100
Patent
active
060431032
ABSTRACT:
A field-emission cold cathode includes a substrate having a sharply pointed emitter disposed on a surface thereof and serving as an emitter electrode, an insulating film disposed on the substrate, and a gate electrode disposed on the insulating film and having an opening defined therein and having an edge surrounding the emitter. The gate electrode and the emitter are spaced from each other across a cavity near the emitter. The insulating film and the substrate have a boundary surface therebetween which is lower than the surface of the substrate. The substrate has a step positioned between the boundary surface and the surface of the substrate on which the emitter is disposed, the step being disposed between the insulating film and the emitter. The insulating film supports the gate electrode and has a thickness greater than the distance between the emitter and the gate electrode.
REFERENCES:
patent: 4168213 (1979-09-01), Hoeberechts
patent: 5266530 (1993-11-01), Bagley et al.
patent: 5775968 (1998-07-01), Toyoda et al.
Japanese Office Action, dated Aug. 10, 1999, with English language translation of Japanese Examiner's comments.
NEC Corporation
Niebling John F.
Zarneke David A.
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