Etching a substrate: processes – Forming or treating an article whose final configuration has...
Patent
1995-11-21
1997-07-29
Breneman, R. Bruce
Etching a substrate: processes
Forming or treating an article whose final configuration has...
216 40, 216 41, 216 49, 445 50, 445 51, H01J 902
Patent
active
056518986
ABSTRACT:
A field emission cold cathode comprises a conductive substrate, an insulating layer formed on the substrate and having plural cavities each for receiving an emitter, a gate electrode for applying a high electric field to the tips of emitters. An annular portion of the gate electrode each defining an opening overlapping corresponding cavity is located at a distance from the substrate smaller than the distance between another portion of the gate electrode and the substrate. Parasitic capacitance between the gate electrode and the cold cathode including the substrate and the emitter is reduced due to the large distance between the another portion of the gate electrode and the substrate. Between the another portion and the substrate, a second insulating layer or a gap is disposed. The field emission is cold cathode can function in a high frequency range while fabricating conical emitters with a small height due to the small distance between the annular portions and the substrate.
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C. A. Spindt, I. Brodie, L. Humphrey, and E. R. Westerberg, "Physical Properties of Thin-Film Field Emission Cathodes With Molybdenum Cones", 5-137058, Journal of Applied Physics, vol. 47, No. 12, (Dec. 1976), Stanford Research Institute, Menlo Park, California 94025.
Henry G. Kosmahl, "A. Wide-Bandwidth High-gain Small-Size Distributed Amplifier With Field-Emission Triodes (Fetrode's) For the 10 to 300 GHz Frequency range", IEEE Transactions on Electron Devices, vol. 36, No. 11, Nov. 1989.
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Alanko Anita
Breneman R. Bruce
NEC Corporation
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