Field emission cathode including cylindrically shaped resistive

Electric lamp and discharge devices – Electrode and shield structures – Point source cathodes

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313309, 313497, 445 24, H01J 130, H01J 1706

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active

055571603

ABSTRACT:
A high resistance epitaxial layer is formed on a substrate, and a resistance layer is formed for each emitter by injecting ions into the high resistance epitaxial layer via an aperture formed through a gate electrode. An emitter is provided on the resistance layer. Alternatively, ions are injected into a semiconductor substrate of a first conductivity type to provide a region of a second conductivity type opposite to the first conductivity type in the semiconductor substrate by using a gate electrode having an aperture as a mask. An emitter is provided on the region of the semiconductor substrate.

REFERENCES:
patent: 4575765 (1986-03-01), Hirt
patent: 4940916 (1990-07-01), Borel et al.
patent: 5162704 (1992-11-01), Kobori et al.
patent: 5371431 (1994-12-01), Jones et al.
patent: 5451830 (1995-09-01), Huang
Pp. 3504 to 3505 of "J. Applied Physics, vol. 39, No. 7".

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