Active solid-state devices (e.g. – transistors – solid-state diode – Thin active physical layer which is – Low workfunction layer for electron emission
Patent
1993-09-16
1996-11-05
Crane, Sara W.
Active solid-state devices (e.g., transistors, solid-state diode
Thin active physical layer which is
Low workfunction layer for electron emission
445 50, 445 51, 313307, 313309, 313336, 313351, 345 74, H01L 2906, H01J 102, H01J 904, H01J 146
Patent
active
055720412
ABSTRACT:
A field emission cathode device comprising a semiconductor substrate, a semiconductor cathode electrode layer, emitter tips formed on the cathode electrode layer to emit electrons therefrom, and a gate electrode layer formed on an insulating layer. Each of the emitter tips is arranged in the aligned apertures of the gate electrode layer and the insulating layer. To electrically isolate two adjacent cathode electrode lines from each other, the cathode electrode layer is made of a semiconductor having a conductivity type different from that of the substrate. Alternatively, the cathode electrode is made of a semiconductor having the same conductivity type as that of the substrate, and in this case, a portion between two adjacent cathode electrode lines is made of a heavily doped semiconductor so as to electrically isolate two adjacent cathode electrodes.
REFERENCES:
patent: 5176557 (1993-01-01), Okunuki et al.
Meyer, R., "Recent Development on `Microtips` Display at LETI," Technical Digest Of IVMC '91, Nagahama, JP, 1991, pp. 6-9.
Betsui Keiichi
Fukuta Shin'ya
Toyoda Osamu
Crane Sara W.
Fujitsu Limited
Tang Alice W.
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