Field-emission cathode and method of producing the same

Details Field-emission cathode and method of producing the same Field-emission cathode and method of producing the same

1998-09-22

2000-05-02

Bowers, Charles

Semiconductor device manufacturing: process

Electron emitter manufacture

H01L 2146, H01L 2100

Patent

active

060571721

ABSTRACT:
In a field-emission cathode, a silicon substrate is heated to cause oxygen present therein to form silicon oxide cores. The silicon oxide cores are used as a mask for forming emitters. Because the cores each has a diameter as small as about 0.1 .mu.m, the emitters can be density arranged. A method of producing such a field-emission cathode is also disclosed.

REFERENCES:
patent: 5391259 (1995-02-01), Cathey et al.
patent: 5527200 (1996-06-01), Lee et al.
patent: 5676853 (1997-10-01), Alwan
patent: 5804833 (1998-09-01), Stettner et al.
patent: 5811020 (1998-09-01), Alwan
patent: 5949182 (1999-09-01), Shealy et al.
Spindt, C. A., "A thin-film field-emission cathode," Communications, pp. 3504-3505, Feb. 19, 1968.

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