Field electron emission device production method

Details Field electron emission device production method Field electron emission device production method

1991-11-13

1993-07-20

Rosenbaum, Mark

Electric lamp or space discharge component or device manufacturi

Process

With assembly or disassembly

445 50, 156649, H01J 130, H01J 902

Patent

active

052288781

ABSTRACT:
A field emission device and method for manufacturing which comprises using a diffusion mask to preserve an area of a silicon substrate for use as a cathode while all around the cathode the substrate is being diffused with oxygen to form an insulating layer. And further comprising depositing a molybdenum gate electrode layer on the insulating layer and etching the molybdenum gate electrode layer such that the diffusion mask falls off and the insulating layer is dissolved around the cathode through the hole formed in the gate electrode layer by the diffusion mask being removed. The gate electrode openings are therefore automatically and independently self-aligned with their respective cathodes.

REFERENCES:
patent: 3812559 (1974-05-01), Spindt et al.
patent: 3970887 (1976-07-01), Smith et al.
patent: 4008412 (1977-02-01), Yuito et al.
patent: 4168213 (1979-09-01), Hoeberechts
patent: 4583281 (1986-04-01), Ghezzo et al.

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