Field electron emission device

Details Field electron emission device Field electron emission device

1992-02-21

1993-07-20

Yusko, Donald J.

Electric lamp and discharge devices

Discharge devices having a multipointed or serrated edge...

313351, 313336, H01J 130

Patent

active

052296822

ABSTRACT:
A field emission device and method for manufacturing which comprises using a diffusion mask to preserve an area of a silicon substrate for use as a cathode while all around the cathode the substrate is being diffused with oxygen to form an insulating layer. And further comprising depositing a molybdenum gate electrode layer on the insulating layer and etching the molybdenum gate electrode layer such that the diffusion mask falls off and the insulating layer is dissolved around the cathode through the hole formed in the gate electrode layer by the diffusion mask being removed. The gate electrode openings are therefore automatically and independently self-aligned with their respective cathodes.

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Itoh, J., "Fabrication of Micron-size Vacuum Triodes with Si Field Emitters," Electronic Engineering Collective Research Institute Report (JAPAN), vol. 53, No. 10, Jun. 5, 1989, pp. 1-12.
Gray, et al., "A Vacuum Field Effect Transistor Using Silicon Field Emitter Arrays," IEDM 86, pp. 776-779.
Campisi, et al., "Microfabrication of Field Emission Devices for Vacuum Integrated Circuits Using Orientation Independent Etching," Mat. Res. Soc. Symp. Proc., vol. 76, pp. 67-73.

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