Field effects semiconductor devices

Details Field effects semiconductor devices Field effects semiconductor devices

1980-01-31

1982-05-25

Rosenberger, R. A.

357 22, H01S 318

Patent

active

043319670

ABSTRACT:
In a field effect semiconductor device comprising a semi-insulator layer composed of a semiconductor material, an N conductivity type active layer made of the same semiconductor material and acting as a channel, spaced cathode and anode electrodes formed on the active layer, the cathode electrode being in ohmic contact with the active layer, and means for applying drive voltage across the cathode and anode electrodes for varying the electrons flowing through the active layer so as to vary output current, a P conductive region is provided beneath the anode electrode and extending through the active layer toward to or penetrating into the semiconductor layer.

REFERENCES:
patent: 3531698 (1970-09-01), Atalla
patent: 3585520 (1971-06-01), Yanai
patent: 3600705 (1971-08-01), Tantraporn
patent: 3701043 (1972-10-01), Zuleeg et al.
patent: 3991328 (1976-11-01), Upadhyayula

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