Field-effect type superconducting device including bi-base oxide

Details Field-effect type superconducting device including bi-base oxide Field-effect type superconducting device including bi-base oxide

1993-06-24

1998-10-27

Crane, Sara W.

Active solid-state devices (e.g., transistors, solid-state diode

Thin active physical layer which is

Tunneling through region of reduced conductivity

505193, H01L 2906

Patent

active

058280790

ABSTRACT:
A field-effect type superconducting device includes a channel layer. The channel layer includes Bi-based oxide compound containing Cu. A source electrode contacts the channel layer. A drain electrode contacts the channel layer. A gate insulating film made of insulating material extends on on the channel layer. A gate electrode extends on the gate insulating film.

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