Field effect type semiconductor device and method of fabricating

Details Field effect type semiconductor device and method of fabricating Field effect type semiconductor device and method of fabricating

1998-07-10

2000-08-08

Abraham, Fetsum

Active solid-state devices (e.g., transistors, solid-state diode

Heterojunction device

Field effect transistor

257187, 257189, 257194, 257200, 257206, 257331, 257281, H01L 27085

Patent

active

061005479

ABSTRACT:
A first electrode layer composed of Pt is formed on an operating layer, and a second electrode layer composed of a material which is different from Pt is formed on the operating layer so as to cover the first electrode layer. A buried electrode layer composed of Pt is formed in the operating layer under the first electrode layer. The first electrode layer, the second electrode layer and the buried electrode layer constitute a gate electrode.

REFERENCES:
patent: 5399896 (1995-03-01), Oku
F. Ren, et al., "Use of Pt Gate Metallization to Reduce Gate Leakage Current in GaAs MESFETs", Journal of Electronic Materials, vol. 20, No. 8, 1991, pp. 595-598.
Takuma Tanimoto, et al., "Single Voltage Supply High Efficiency In GaAs Pseudomorphic Double-Hetero HEMTs with Platinum Buried Gates", Extended Abstracts of the 1995 International Conference on Solid State Devices and Materials, 1995, pp. 947-949.
Kevin J. Chen, et al., "High-Performance InP-Based Enhancement-Mode HEMTs Using Non-Alloyed Ohmic Contacts and Pt-Based Buried-Gate Technologies", IEEE Transactions on Electron Devices, vol. 43, No. 2, pp. 252-257 (1996).

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