Active solid-state devices (e.g. – transistors – solid-state diode – Regenerative type switching device – Combined with field effect transistor
Patent
1995-02-07
1998-03-17
Wojciechowicz, Edward
Active solid-state devices (e.g., transistors, solid-state diode
Regenerative type switching device
Combined with field effect transistor
257173, 257174, 257355, 257360, 257391, H01L 2974
Patent
active
057290326
ABSTRACT:
It is an abject to stably and surely perform protection operation of devices. Since the gate threshold voltage V.sub.GE(th)S in a sense IGBT cell constituting a sensing circuit is set to have a higher value than the gate threshold voltage V.sub.GE(th)M in a main IGBT cell constituting a main circuit, a finite time .DELTA.t is required from when the gate voltage V.sub.GE reaches the gate threshold voltage V.sub.GE(th)M until when it reaches the gate threshold voltage V.sub.GE(th)S in the turn-on period. Accordingly, the rise of the main current Is of the sensing circuit is delayed from the main current Im of the main circuit. As a result, surge current does not appear in the current Is. As the surge current does not appear in the main current of the sensing circuit, a protection circuit of the device operates stably, and breakdown of the device is surely prevented.
REFERENCES:
patent: 4893158 (1990-01-01), Mihara et al.
Ishimura Youichi
Tomomatsu Yoshifumi
Mitsubishi Denki & Kabushiki Kaisha
Wojciechowicz Edward
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