Field effect type Josephson transistor

Details Field effect type Josephson transistor Field effect type Josephson transistor

1989-10-19

1991-12-10

Hille, Rolf

Superconductor technology: apparatus, material, process

High temperature , per se

Having tc greater than or equal to 150 k

357 4, 357 5, 357 233, 505702, 505874, H01L 3922, H01L 2910, H01L 3912, H01B 1200

Patent

active

050718320

ABSTRACT:
A field effect type Josephson transistor in which a source electrode and a drain electrode are provided with a gap therebetween, a tunnel film is provided in the gap between the source electrode and drain electrode, and a gate electrode for field-controlling the tunnel current through the tunnel film is provided. The transistor of such structure is suitable for mass-production and is utilized in manufacture of integrated circuits.

REFERENCES:
patent: 4675711 (1987-06-01), Harder et al.
patent: 4843446 (1989-06-01), Nishino et al.
patent: 4884111 (1989-11-01), Nishino et al.
patent: 4888629 (1989-12-01), Harada et al.
European Patent Application #88103402.9, Ishida, Date of Publication of Application: 9/7/88.

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