Field-effect transistors with weakly coupled layered...

Details Field-effect transistors with weakly coupled layered... Field-effect transistors with weakly coupled layered...

2008-04-22

2008-04-22

Smith, Matthew (Department: 2823)

Active solid-state devices (e.g., transistors, solid-state diode

Semiconductor is an oxide of a metal or copper sulfide

C257S004000, C257SE29291, C257SE29294, C257SE21414, C257SE31029, C438S158000

Reexamination Certificate

active

07361929

ABSTRACT:
A field-effect transistor includes source, drain, and gate electrodes; a crystalline or polycrystalline layer of inorganic semiconductor; and a dielectric layer. The layer of inorganic semiconductor has an active channel portion physically extending from the source electrode to the drain electrode. The inorganic semiconductor has a stack of 2-dimensional layers in which intra-layer bonding forces are covalent and/or ionic. Adjacent ones of the layers are bonded together by forces substantially weaker than covalent and ionic bonding forces. The dielectric layer is interposed between the gate electrode and the layer of inorganic semiconductor material. The gate electrode is configured to control a conductivity of an active channel part of the layer of inorganic semiconductor.

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