Field-effect transistors with micron and submicron gate lengths

Coating processes – Electrical product produced – Condenser or capacitor

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Details

29571, 156662, 204192D, 204192SP, 357 22, H01L 21283, H01L 2124

Patent

active

043105700

ABSTRACT:
A method for forming ohmic contacts of gold and germanium gold on a gallium arsenide substrate in which a layer of silicon dioxide is placed over the gold in the contact area prior to sinter alloying to improve wetting and reduce contact resistance.

REFERENCES:
patent: 4048712 (1977-09-01), Buiatti
patent: 4196439 (1980-04-01), Niehaus
Ohkawa et al., "Low Noise GaAs Field-Effect Transistors", Fujitsu Scientific & Technical Journal, pp. 151-173, Mar. 1975.
Fukuta et al., "Power GaAs MESFET . . .", IEEE Transactions on Microwave Theory and Techniques, vol. MTT24, No. 6, Jun. 1976.
Fukuta et al., "GaAs Microwave Power FET", IEEE Transactions on Electron Devices, vol. ED-23, No. 4, Apr. 1976.

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