Active solid-state devices (e.g. – transistors – solid-state diode – Physical configuration of semiconductor – With specified crystal plane or axis
Reexamination Certificate
2011-03-29
2011-03-29
Fahmy, Wael M (Department: 2814)
Active solid-state devices (e.g., transistors, solid-state diode
Physical configuration of semiconductor
With specified crystal plane or axis
C257S151000, C257S153000, C257S331000, C257S366000, C257S387000, C257SE29003, C257SE21186, C257SE21621, C257SE21635, C257SE21638, C257SE21458, C257SE21205
Reexamination Certificate
active
07915713
ABSTRACT:
An integrated circuit includes a first field effect transistor of a first carrier type and a second field effect transistor of a second, different carrier type. In a conductive state, a first channel of the first field effect transistor is oriented to one of a first set of equivalent crystal planes of a semiconductor substrate and a second channel of the second field effect transistor is oriented to at least one of a second, different set of equivalent crystal planes. The first set of equivalent crystal planes is parallel to a main surface of the semiconductor substrate and the second set of equivalent crystal planes is perpendicular to the main surface.
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Faul Juergen
Holz Juergen
Armand Marc
Edell Shapiro & Finnan LLC
Fahmy Wael M
Qimonda AG
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