Field effect transistors having parallel-connected subtransistor

Details Field effect transistors having parallel-connected subtransistor Field effect transistors having parallel-connected subtransistor

1986-02-06

1987-03-17

Larkins, William D.

357 20, 357 86, H01L 2978, H01L 2908, H01L 2708

Patent

active

046511814

ABSTRACT:
A semiconductor device includes a semiconductor body in which a field effect transistor is formed which is composed of a number of parallel-connected subtransistors. Each subtransistor comprises a polygonal box-shaped cell of the semiconductor body. These cells each comprise a first semiconductor zone embedded in the semiconductor body and a second semiconductor zone embedded in the first zone. The peripheral part of the semiconductor body surrounding the first zone serves as a drain zone of the subtransistor, while the second zone serves as a source zone and a narrow edge strip of the first zone lying between the second zone and the peripheral part serves as a channel zone. The peripheral part comprises strip-shaped parts which extend in the direction of a central part of the first zone. The transistor has a comparatively low resistance in the switched-on state.

REFERENCES:
"Siliconix Undercuts Power MOSFET Industry", Electronic Engineering, Feb. 1983, p. 15.

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