Field effect transistors having comb-shaped electrode assemblies

Details Field effect transistors having comb-shaped electrode assemblies Field effect transistors having comb-shaped electrode assemblies

1996-01-26

1997-03-25

Wojciechowicz, Edward

Active solid-state devices (e.g., transistors, solid-state diode

Non-single crystal, or recrystallized, semiconductor...

Field effect device in non-single crystal, or...

257280, 257281, 257471, 257666, 257750, 257758, 257276, H01L 2352

Patent

active

056147627

ABSTRACT:
A FET has comb-shaped electrode assemblies for source, drain and gate of the FET. Each of the source and drain electrode assemblies has a plurality of electrodes contacting the active region of the FET and formed as a first layer metal laminate, and a bus bar connecting the electrodes together to a corresponding pad and formed as a second layer metal laminate. The gate electrode layer has a plurality of gate electrodes contacting the active layer in Schottky contact, a gate bus bar connecting the gate electrodes together, a gate pad connected to the gate bus bar. The gate bus bar is formed as a first layer metal laminate intersecting the stem portion of the comb-shaped source bus bar. The two-layer metal structure of the FET reduces the number of photolithographic steps and thereby fabrication costs of the FET.

REFERENCES:
patent: 3967305 (1976-06-01), Zuleeg

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