Field-effect transistors and method of manufacturing the same

Details Field-effect transistors and method of manufacturing the same Field-effect transistors and method of manufacturing the same

1997-12-16

1999-07-20

Thomas, Tom

Active solid-state devices (e.g., transistors, solid-state diode

Field effect device

Junction field effect transistor

257280, 257283, H01L 2980

Patent

active

059259035

ABSTRACT:
A conductive layer made of n-type GaAs is formed on a semi-insulating substrate made of GaAs. A pair of contact regions made of n.sup.+ -type GaAs are formed on the conductive layer. A source electrode is formed on the left-hand contact region, while a drain electrode is formed on the right-hand contact region. A gate recessed region is formed in the region of the conductive layer located between the pair of contact regions so that a gate electrode is formed on the gate recessed region. A depressed portion is formed in the gate recessed region of the conductive layer. The wall face of the depressed portion closer to the gate electrode is flush with or protruding from the side face of the gate electrode facing the drain electrode.

REFERENCES:
patent: 4961194 (1990-10-01), Kuroda et al.
patent: 5821576 (1998-10-01), Sriram

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