Field effect transistors

Details Field effect transistors Field effect transistors

1978-03-13

1980-01-08

Wojciechowicz, Edward J.

357 4, 357 23, H01L 2980

Patent

active

041830334

ABSTRACT:
A field effect transistor for operation at temperatures below 150.degree. K. is capable of operating at low voltage and current levels at high speed. The transistor is fabricated by deposition of metal source drain and gate electrodes upon a layer of semi-conductor having a concentration of free carriers less than 10.sup.16 cm.sup.-3 formed on a substrate having a resistivity greater than 10.sup.4 ohm-cm.

REFERENCES:
patent: 3958266 (1976-05-01), Athanas
patent: 3997908 (1976-12-01), Schloetterer

Affiliated with

Also associated with

Rating

Field effect transistors does not yet have a rating. At this time, there are no reviews or comments for this patent.

If you have personal experience with Field effect transistors, we encourage you to share that experience with our LandOfFree.com community. Your opinion is very important and Field effect transistors will most certainly appreciate the feedback.

Rate now

Comments { 0 }

Profile ID: LFUS-PAI-O-1942363